Picosecond optoelectronic characterization of a heterojunction bipolar transistor
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 889-892 vol.3
- https://doi.org/10.1109/mwsym.1989.38865
Abstract
A time-domain network analyzer with a bandwidth greater than 100 GHz was constructed using picosecond optoelectronic techniques. The S-parameters of a heterojunction bipolar transistor (HBT) with an f/sub max/ of 35 GHz were measured using this system. The results show good agreement with measurements of a similar HBT using a conventional vector network analyzer over the bandwidth of the analyzer (26 GHz). The optoelectronically measured S-parameters of the device were limited by the cutoff frequency of the device.<>Keywords
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