Neutralization of mobile ions in the SiO2 film of MOS structures
- 1 July 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (7), 4879-4882
- https://doi.org/10.1063/1.326553
Abstract
Space‐charge polarization of sodium ions in the SiO2 layer of MOS structures is observed by comparing thermally stimulated currents with capacitance‐voltage characteristics. The results cannot be interpreted by only a space‐charge polarization of a constant excess charge. Charge exchange at the interface is suggested and this idea is supported by the results of thermally stimulated surface potentials. Further, estimation of some parameters of ions are discussed for the case when neutralization of ions occurs at the interface.Keywords
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