Electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications
- 7 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMsProceedings of the IEEE, 1989
- Ferroelectric switching revisitedFerroelectrics, 1988
- Space Charge Effect in Lead Zirconate Titanate Ceramics Caused by the Addition of ImpuritiesJapanese Journal of Applied Physics, 1970
- Dynamic Behavior of Domain Walls in Barium TitanatePhysical Review B, 1955