Hydrogen-related center with tetrahedral symmetry in ion-implanted silicon
- 15 February 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (5), 3330-3336
- https://doi.org/10.1103/physrevb.39.3330
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Interaction of deuterium with defects in silicon studied by means of channelingPhysical Review B, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- New Si-H IR bands in neutron-irradiated silicon grown in hydrogen atmospherePhysica Status Solidi (a), 1987
- The isotope study of the SiH absorption peaks in the FZSi grown in hydrogen atmosphereSolid State Communications, 1985
- Hydrogen Implantation into Silicon. Infra-Red Absorption Spectra and Electrical PropertiesPhysica Status Solidi (a), 1985
- The Nature of Two Intense Si–H IR Stretching Bands in FZ‐Si:HPhysica Status Solidi (b), 1985
- Infrared absorption of silicon irradiated by protonsPhysica Status Solidi (b), 1978
- Bonding and thermal stability of implanted hydrogen in siliconJournal of Electronic Materials, 1975
- Uniaxial stress splitting of doubly degenerate states of tetragonal and trigonal centres in cubic crystalsProceedings of the Physical Society, 1967
- Normal-Coordinate Treatment and Computation of Coriolis Coefficients and Ground-State Centrifugal-Distortion Constants of Digermane, Disilane, Methylgermane, and MethylsilaneThe Journal of Chemical Physics, 1966