Dislocation-free GaAs and InP crystals by isoelectronic doping
- 31 March 1983
- journal article
- editorial
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (2), 417-424
- https://doi.org/10.1016/0022-0248(83)90383-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965