Growth and characterization of 10-nm-thick c-axis oriented epitaxial PbZr0.25Ti0.75O3 thin films on (100)Si substrate

Abstract

A 10-nm-thick ${\mathrm{PbZr}}_{\mathrm{0.25}}{\mathrm{Ti}}_{\mathrm{0.75}}{\mathrm{O}}_{\mathrm{3}}$ thin film is epitaxially grown on a ${\mathrm{SrRuO}}_{\mathrm{3}}{\mathrm{/BaTiO}}_{\mathrm{3}}{\mathrm{/ZrO}}_{\mathrm{2}}\mathrm{/Si}$ heterostructure substrate by reactive evaporation. Structural and electrical properties of the film are investigated. It is concluded that the film is ferroelectric and retains a native uniform upward polarization. Artificial downward polarization domains, whose average diameter is 24 nm, can be formed in the film.