Intrinsic Surface States in Semiconductors
- 29 April 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 20 (18), 992-994
- https://doi.org/10.1103/physrevlett.20.992
Abstract
Experimentally well established features of semiconductor surface-state distributions are explained in terms of a realistic model calculation.Keywords
This publication has 13 references indexed in Scilit:
- Influence of volume dope on Fermi level position at gallium arsenide surfacesSurface Science, 1967
- Metallic Interfaces. II. Influence of the Exchange-Correlation and Lattice PotentialsPhysical Review B, 1967
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Surface representations and complex band structure of a diamond-type semiconductorProceedings of the Physical Society, 1966
- Electronic surface states in germanium and siliconSolid State Communications, 1966
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Theory of Surface StatesPhysical Review B, 1965
- Some theory about surface statesSurface Science, 1964
- Surface States on the (111) Surface of DiamondPhysical Review Letters, 1964
- The theory of alloys in the γ-phaseProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1934