Effect of growth rate on properties of Ga0.51In0.49P grown by organometallic vapor phase epitaxy
- 2 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 109 (1-4), 279-284
- https://doi.org/10.1016/0022-0248(91)90190-g
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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