Nonexistence of Long-Range Order in Ga0.5In0.5P Epitaxial Layers Grown on (111)B and (110)GaAs Substrates
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A), L2370
- https://doi.org/10.1143/jjap.27.l2370
Abstract
It has been found that Ga0.5In0.5P layers grown at 700°C on (111)B and (110)GaAs substrates do not show {1/2, 1/2, 1/2} superlattice (SL) formation, in contrast to that for the layers grown on (001)GaAs. The band-gap energy for these layers, which show no SL and are lattice-matched to GaAs, was estimated to be 1.918±0.002 eV at room temperature.Keywords
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