Theoretical study of structures and growth of strained Si/Ge superlattices
- 9 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (2), 165-167
- https://doi.org/10.1063/1.103972
Abstract
The geometry structures of strained (Si)n/(Ge)n (1≤n≤6) superlattices grown pseudomorphically on (001) oriented Si1−xGex (0≤x≤1) substrates are studied. The calculations indicate that with proper choice of the Ge composition factor x symmetrically strained superlattices can be approximately obtained, which might render the growth of a superlattice with larger thickness possible.Keywords
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