Orientation effects in the LPE growth of GaInAsP quaternary alloys
- 1 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (5), 449-451
- https://doi.org/10.1063/1.90374
Abstract
It was found that the liquidus composition determined by the saturation technique for the (100) ‐oriented InP source crystal is different from that for the (111) B‐oriented InP source crystal in the LPE growth of GaInAsP alloys. The lattice‐matching conditions in GaInAsP LPE growth using the liquidus data are also influenced by the substrate orientation.This publication has 14 references indexed in Scilit:
- Arsenic and gallium distribution coefficients in liquid-phase epitaxial GaxIn1−xPyAs1−yApplied Physics Letters, 1978
- Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP SubstratesJournal of the Electrochemical Society, 1978
- Surface Emitting LED's for the 1.2–1.3 µm Wavelength with GaInAsP/InP Double HeterostructuresJapanese Journal of Applied Physics, 1977
- 1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room TemperatureJapanese Journal of Applied Physics, 1977
- Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μmElectronics Letters, 1977
- GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE ApparatusJapanese Journal of Applied Physics, 1976
- High-quantum-efficiency photoemission from an InGaAsP photocathodeApplied Physics Letters, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Efficient lattice-matched double-heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−yApplied Physics Letters, 1976
- Photoemission from cesium-oxide-activated InGaAsPApplied Physics Letters, 1973