A surface-charge random-access memory system
- 1 October 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 7 (5), 330-335
- https://doi.org/10.1109/jssc.1972.1052888
Abstract
The authors present a surface-charge storage cell suitable for word-organized dynamic random-access memory and discuss its operation in a memory system. Experimental results and computer simulations of the readout process on a 4/spl times/8 array using this cell are given. A sensitive stable sense-and-refresh amplifier, suitable for use with this memory cell is also described. Simulations of a 4096-bit chip with a storage cell density of 2.5 mils/SUP 2//bit using this refresh amplifier predict a cycle time of 250 ns.Keywords
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