Very low temperature growth and doping of silicon MBE layers
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 484-485
- https://doi.org/10.1016/0022-0248(89)90448-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Surface segregation of Sb on Si(100) during molecular beam epitaxy growthSurface Science, 1988
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in SiJapanese Journal of Applied Physics, 1987
- Impurity Conduction in Transmutation-Doped-Type GermaniumPhysical Review B, 1960
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954