Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar Transistors
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8A), L596
- https://doi.org/10.1143/jjap.24.l596
Abstract
A current gain reduction with emitter-base junction size decrease is found in uniform base AlGaAs/GaAs heterojunction bipolar transistors (HBTs). This characteristic is analyzed using a model that takes into account a lateral diffusion of injected electrons, and is shown to be well explained by this model. The results show the importance of excess base leakage current due to minority carrier recombinations in the external bases of uniform base HBTs.Keywords
This publication has 2 references indexed in Scilit:
- Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1984
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982