Substrate orientation and surface morphology of GaAs liquid phase epitaxial layers
- 1 December 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 27, 148-153
- https://doi.org/10.1016/s0022-0248(74)80059-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Improved boat for multiple-bin liquid phase epitaxyJournal of Crystal Growth, 1973
- Surface morphology of liquid-phase epitaxial layersJournal of Applied Physics, 1973
- A temperature gradient cell for liquid phase epitaxial growth of GaAsJournal of Crystal Growth, 1972
- Thin solution multiple layer epitaxyJournal of Crystal Growth, 1972
- The growth and properties of LPE GaAsSolid-State Electronics, 1972
- Growth of Smooth Uniform Epitaxial Layers by Liquid-Phase-Epitaxial MethodJournal of Applied Physics, 1972
- The liquid phase epitaxy of AlxGa1-xAs for monolithic planar structuresProceedings of the IEEE, 1971
- Isothermal Solution Mixing Growth of Thin Ga[sub 1−x]Al[sub x]As LayersJournal of the Electrochemical Society, 1971
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970