A temperature gradient cell for liquid phase epitaxial growth of GaAs
- 1 December 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 16 (3), 219-222
- https://doi.org/10.1016/0022-0248(72)90205-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The growth and properties of LPE GaAsSolid-State Electronics, 1972
- Growth of Smooth Uniform Epitaxial Layers by Liquid-Phase-Epitaxial MethodJournal of Applied Physics, 1972
- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- A new technique for liquid phase epitaxyJournal of Crystal Growth, 1970
- Liquid-phase epitaxial growth of gallium arsenide under transient thermal conditionsJournal of Crystal Growth, 1970
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- High purity GaAs by liquid phase epitaxySolid State Communications, 1969
- On the growth rate of crystals from solutionJournal of Crystal Growth, 1968
- Theoretical analysis of requirements for crystal growth from solutionJournal of Crystal Growth, 1968
- PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTIONApplied Physics Letters, 1967