Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods
- 1 February 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 20 (1), 76-87
- https://doi.org/10.1109/jssc.1985.1052279
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Analysis and Simulation of Semiconductor DevicesPublished by Springer Nature ,1984
- Precipitation as the Phenomenon Responsible for the Electrically Inactive Arsenic in SiliconJournal of the Electrochemical Society, 1983
- Alteration of diffusion profiles in semiconductors due to p-n junctionsSolid-State Electronics, 1982
- Generalized Model for the Clustering of As Dopants in SiJournal of the Electrochemical Society, 1982
- Nd:YAG laser annealing of arsenic-implanted silicon: Relaxation of metastable concentrations by means of CO2-laser irradiationJournal of Applied Physics, 1981
- Shallow junctions by high-dose As implants in Si: experiments and modelingJournal of Applied Physics, 1980
- The solid solubility and thermal behavior of metastable concentrations of As in SiApplied Physics Letters, 1980
- Charge neutrality and the internal electric field produced by impurity diffusionSolid-State Electronics, 1980
- A modified Newton method for the solution of ill-conditioned systems of nonlinear equations with application to multiple shootingNumerische Mathematik, 1974
- A new efficient algorithm for solving differential-algebraic systems using implicit backward differentiation formulasProceedings of the IEEE, 1972