Indium stability on InGaAs during atomic H surface cleaning

Abstract

Atomic H exposure of a GaAssurface at 390 ° C is a relatively simple method for removing the native oxides without altering the surface stoichiometry. In-situreflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to show that this procedure applied to In 0.2 Ga 0.8 As effectively removes the native oxides resulting in an atomically clean surface. However, the bulk InGaAs stoichiometry is not preserved from this treatment. The In:Ga ratio from the substrate is found to decrease by 33%. The implications for high-mobility channel applications are discussed as the carrier mobility increases nearly linearly with the In content.