CdZnSe-ZnSe Multilayers by Metalorganic Vapour Phase Epitaxy Using Dimethylselenide
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1S)
- https://doi.org/10.1143/jjap.32.669
Abstract
The growth of CdZnSe-ZnSe multilayers using (CH3)2Se at 475°C is reported. Despite the occurrence of thermally induced diffusion, observed by secondary ion mass spectrometry, quantum wells of the desired alloy composition have been successfully grown for a well width of 20 nm. The uniform layers which can be obtained using dimethylselenide as the group VI precursor allow stimulated emission to be observed at 77 K from a multiple quantum well structure consisting of three, 30 nm wells under nitrogen laser excitation.Keywords
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