Warm-Carrier Microwave Transport in n Si

Abstract

The small‐signal microwave (9.61 GHz) dielectric constant and microwave resistivity were measured under warm electron conditions at 77 °K lattice temperature. Both were found to be anisotropic. The dielectric constant exhibited a ``hump'' at high electric fields when applied in the $\text{〈100〉}$ crystallographic direction but not when applied in the $\text{〈111〉}$ crystallographic direction. The anomaly is attributed to a repopulation modulation caused by the microwave field. A theory is presented which explains the effect. Analysis of the data yields the f‐type intervalley relaxation time for the $\text{〈100〉}$ orientation as a function of electric field. The f‐scattering strength of the 200 and 630 °K phonons are determined. The g scattering is inferred to be very weak in comparison to either of the f‐type scatters.