Electron-Spin-Resonance Measurements of the Spin Susceptibility of Heavily Dopedn-Type Silicon

Abstract

The results of relative spin-susceptibility measurements as a function of donor concentration are reported for heavily doped $n$-type silicon. It is shown that, at liquid helium temperatures, the susceptibility decreases with impurity concentration for samples in the impurity-band region. At still higher concentrations, the susceptibility is well described by the ${\mathrm{}\left(\mathrm{concentration}\right)\mathrm{}}^{1/3}$ law expected for a degenerate electron gas.