Effects of nitrogen doping on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like-carbon films
- 1 June 1994
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (6), 569-575
- https://doi.org/10.1007/bf02670661
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Effects of nitrogen trifluoride on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like carbon filmsJournal of Electronic Materials, 1993
- Ion beam studies of the static and dynamic properties of dopants in diamondMaterials Science and Engineering B, 1992
- Physical properties of plasma-enhanced chemically vapour deposited hydrogenated and nitrogenated amorphous carbonsSurface and Coatings Technology, 1991
- The effect of radio frequency substrate biasing in the deposition of diamond-like carbon films in an electron cyclotron resonance dischargeJournal of Vacuum Science & Technology A, 1991
- Chemical structure and physical properties of diamond-like amorphous carbon films prepared by magnetron sputteringJournal of Materials Research, 1990
- Tribological characteristics of diamond-like films deposited with an are-discharge methodJournal of Materials Research, 1990
- Symmetry breaking in nitrogen-doped amorphous carbon: Infrared observation of the Raman-activeGandDbandsPhysical Review B, 1989
- Structural and optical properties of amorphous carbon nitrideSolid State Communications, 1988
- Effect of dilution gases in methane on the deposition of diamond-like carbon in a microwave discharge II: Effect of hydrogenThin Solid Films, 1987
- Chemical modification of the electrical properties of hydrogenated amorphous carbon filmsSolid State Communications, 1980