Liquid Phase Epitaxy of Si1−xGex(O<×≲1) On Partially Masked Si-Substrates
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987
- High quality heteroepitaxial Ge growth on (100) Si by MBEJournal of Crystal Growth, 1987
- Epitaxial Crystallization of Ge on Si Using Evaporation and Recrystallization TechniquesMRS Proceedings, 1986
- GaAs/Ge Crystal Growth on Si and SiO2/Si SubstratesMRS Proceedings, 1986
- Silicon Layers Grown on Patterned Substrates by Liquid Phase EpitaxyMRS Proceedings, 1985