Multi-exponential analysis of DLTS
- 1 March 1986
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 39 (3), 197-202
- https://doi.org/10.1007/bf00620735
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase EpitaxyJapanese Journal of Applied Physics, 1984
- The use of linear predictive modeling for the analysis of transients from experiments on semiconductor defectsJournal of Applied Physics, 1984
- Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloysJournal of Applied Physics, 1983
- Point Defects in Semiconductors IISpringer Series in Solid-State Sciences, 1983
- A novel method to detect nonexponential transients in deep level transient spectroscopyJournal of Applied Physics, 1982
- The analysis of exponential and nonexponential transients in deep-level transient spectroscopyJournal of Applied Physics, 1981
- An eigenfunction expansion method for the analysis of exponential decay curvesThe Journal of Chemical Physics, 1976
- A Fourier method for the analysis of exponential decay curvesBiophysical Journal, 1976
- Thermal activation energy of the gold−acceptor level in siliconJournal of Applied Physics, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974