Degradation of inversion layer electron mobility due to interface traps in metal-oxide-semiconductor transistors
- 1 September 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (5), 3252-3257
- https://doi.org/10.1063/1.360013
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Spatial distribution of trapped holes in SiO2Journal of Applied Physics, 1994
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate OxideJapanese Journal of Applied Physics, 1993
- Electron mobility in Si inversion layersSemiconductor Science and Technology, 1992
- Temperature Dependence of Electron Mobility in Si Inversion LayersJapanese Journal of Applied Physics, 1991
- MOSFET mobility degradation due to interface-states, generatd by Fowler-Nordheim electron injection.Microelectronic Engineering, 1991
- Electron-trap generation by recombination of electrons and holes in SiO2Journal of Applied Physics, 1987
- Location of positive charge trapped near the Si-SiO2 interface at low temperatureApplied Physics Letters, 1986
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Criterion for multi-ion scattering in free carrier transportJournal of Physics C: Solid State Physics, 1982
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972