Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerface
- 14 April 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (15), 983-985
- https://doi.org/10.1063/1.96631
Abstract
Chloride vapor phase epitaxy of Ga0.52In0.48P/GaAs was studied using a reactor with two growth chambers. We have obtained high‐purity epitaxial layers of both GaInP and GaAs. For the growth of a heterostructure with an abrupt interface, the optimum growth condition was investigated in detail. Abruptness of the heterointerface was investigated by observing the two‐dimensional electron gas at the heterointerface of Ga0.52In0.48P/GaAs by the Hall and Shubnikov–de Haas measurements.Keywords
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