Role of surface antisite defects in the formation of Schottky barriers
- 15 January 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (2), 1423-1426
- https://doi.org/10.1103/physrevb.25.1423
Abstract
Surface antisite defects produce electronic energy levels in the band gaps of III-V compound semiconductors. These levels can pin the Fermi energy at metal-semiconductor interfaces and cause Schottky-barrier formation.Keywords
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