Thermal stability of indium nitride single crystal films
- 1 June 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (11), 7969-7971
- https://doi.org/10.1063/1.353906
Abstract
We examine the thermal stability of InN single crystal films. The films are not entirely stable and degrade at relatively low temperatures. No change on the surface of the film is found after heating the samples up to 500 °C in nitrogen atmosphere. However, if the films are heated above 550 °C, the surface undergoes a considerable change, owing to the decomposition and desorption of nitrogen.Keywords
This publication has 7 references indexed in Scilit:
- Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN filmsJournal of Crystal Growth, 1991
- Epitaxial growth of indium nitrideJournal of Crystal Growth, 1990
- Preparation and properties of III-V nitride thin filmsJournal of Applied Physics, 1989
- Growth of InN on GaAs Substrates by the Reactive Evaporation MethodJapanese Journal of Applied Physics, 1989
- Heteroepitaxial growth of InN by microwave-excited metalorganic vapor phase epitaxyApplied Physics Letters, 1989
- Electronic structures and doping of InN, N, and NPhysical Review B, 1989
- Thermal stability of InNJournal of Physics and Chemistry of Solids, 1987