Damage Profiles in Ion-Implanted Semiconductors at Low (25°K) Temperatures
- 1 January 1973
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Determination of Lattice Disorder Profiles in Crystals by Nuclear BackscatteringJournal of Applied Physics, 1972
- Heavy-ion range profiles and associated damage distributionsRadiation Effects, 1972
- Multiple scattering of heavy ions of keV energies transmitted through thin, polycrystalline gold foilsRadiation Effects, 1972
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- Anomalous Diffusion of Defects in Ion-Implanted GaAsPublished by Springer Nature ,1971
- Spatial distribution of defects in ion bombarded silicon and germaniumRadiation Effects, 1971
- DEPTH DISTRIBUTION OF EPR CENTERS IN 400-keV O+ ION-IMPLANTED SILICONApplied Physics Letters, 1970
- DEPTH DISTRIBUTION OF DIVACANCIES IN 400-keV O+ ION-IMPLANTED SILICONApplied Physics Letters, 1970
- Spatial distribution of energy deposited into atomic processes in ion-implanted siliconRadiation Effects, 1970
- Alpha-Particle Stopping Cross Section in Solids from 400 keV to 2 MeVPhysical Review B, 1969