Photoresponse of the AsGa antisite defect in as-grown GaAs
- 15 April 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (8), 781-783
- https://doi.org/10.1063/1.95908
Abstract
The photoresponse of the As+Ga antisite electron‐paramagnetic‐resonance (EPR) has been studied in as‐grown semi‐insulating GaAs as a function of illumination time and photon energy hν. The As+Ga EPR signal intensity changes are nonmonotonic in time in the range 1.1≲hν≲1.4 eV. The spectral dependences of As+Ga enhancement and quenching show distinct similarities with the EL2 optical cross sections σ0n (hν) and σ0p (hν), respectively. These results demonstrate that the EL2 defect and the AsGa antisite have practically identical optical and photoelectronic properties.Keywords
This publication has 15 references indexed in Scilit:
- Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1984
- Optical Properties of As-Antisite andDefects in GaAsPhysical Review Letters, 1984
- AsGa antisite defects in GaAsPhysica B+C, 1983
- Manifestations of deep levels point defects in GaAsPhysica B+C, 1983
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donorsApplied Physics Letters, 1982
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980