On the preparation, growth and properties of Cd3As2
- 1 September 1969
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 4 (9), 784-788
- https://doi.org/10.1007/bf00551073
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
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- Liquid Encapsulation Zone Refining (LEZOR)Journal of the Electrochemical Society, 1967
- Quantum transport effects in cadmium arsenide, effective mass tensor and band structurePhysics Letters, 1966
- Observation of interband transitions in Cd3As2Solid State Communications, 1966
- Formation de monocristaux d'arseniure de cadmiumPhysica Status Solidi (b), 1966
- Electrical and Optical Properties of the II–V CompoundsJournal of Applied Physics, 1961
- Physical Properties of Several II-V SemiconductorsPhysical Review B, 1961
- The Preparation and Properties of Some II–V Semiconducting CompoundsJournal of the Electrochemical Society, 1961
- Cd3As2—A Noncubic Semiconductor with Unusually High Electron MobilityJournal of Applied Physics, 1959
- A Relationship between the Refractive Index and the Infra-Red Threshold of Sensitivity for PhotoconductorsProceedings of the Physical Society. Section B, 1950