Electronic Spin of the Ga Vacancy in GaP

Abstract

EPR experiments with uniaxial stress on the Ga vacancy $V_{\mathrm{Ga}}$ in GaP reveal that its spin is $\frac{3}{2}$. The spectrum splits linearly with stress into three components with a coefficient $C_{11}=34\mathrm{}\times {10}^{-13\mathrm{}}$ ${\mathrm{cm}}^{-1\mathrm{}}$ ${(\mathrm{d}\mathrm{y}\mathrm{n}/{\mathrm{cm}}^2)}^{-1\mathrm{}}$ at 20 K. The high spin demonstrates the importance of the exchange interaction for this vacancy.