Studies on e-beam deposited transparent conductive films of In2O3:Sn at moderate substrate temperatures

Abstract

An electron beam evaporation method is used to prepare In₂O₃ films with and without Sn doping. It is shown that highly transparent and conducting films can be prepared at substrate temperature as low as 200 degrees C. The characteristic feature of such films is their high carrier density and high infrared reflectivity. The lowest resistivity is found to be 2.4*10^-4 Omega cm with a carrier concentration of 8*10²⁰ cm^-3 and mobility of about 30 cm² V^-1 s^-1 at the doping level of 4 mol.% SnO₂. These polycrystalline films show a highly preferred orientation. On the basis of Hall measurements and structural data, sources of scattering in these films are suggested.