Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and its heterostructures
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (9), 1856-1863
- https://doi.org/10.1109/3.7127
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Direct observation of ordering in (GaIn) PJournal of Materials Research, 1988
- Investigation by Raman scattering of the properties of III-V compound semiconductors at high temperatureApplied Physics Letters, 1987
- Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energyApplied Physics Letters, 1987
- Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxyApplied Physics Letters, 1987
- Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperatureJournal of Crystal Growth, 1986
- Organometallic growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69)Journal of Applied Physics, 1986
- Observation of OMVPE-Grown GaInP/GaAs Cross-Sections by Transmission Electron MicroscopyJapanese Journal of Applied Physics, 1985
- The preparation of device quality gallium phosphide by metal organic chemical vapor depositionJournal of Crystal Growth, 1982
- Metalorganic vapor phase epitaxial growth of In1−xGaxPJournal of Crystal Growth, 1981
- Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxPJournal of Physics and Chemistry of Solids, 1976