Direct observation of ordering in (GaIn) P

1 June 1988

journal article
Published by Springer Nature in Journal of Materials Research

Vol. 3 (3), 406-409
https://doi.org/10.1557/jmr.1988.0406

Abstract

Ga_x In_{1 − x} Pepilayers grown under a range of growth conditions by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates have been studied in the electron microscope. The results show the presence of an ordering of the group III sublattice parallel to some of the {111} planes. Dark-field images directly reveal ordered domains of different orientations that appear not to be perfect, but contain many planar defects parallel to the growth surface.

Keywords

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