MOVPE growth of beryllium-doped gallium arsenide using diethylberyllium
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3), 32-36
- https://doi.org/10.1016/0022-0248(86)90278-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Silicon and beryllium doping of OMVPE grown AlxGa1−xAs (x = 0−0.3) using silane and diethylberylliumJournal of Crystal Growth, 1984
- Use of Diethylberyllium for Metal Organic Chemical Vapor Deposition of Beryllium‐Doped Gallium ArsenideJournal of the Electrochemical Society, 1983
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975