Photoluminescence and stimulated emission from monolayer-thick pseudomorphic InAs single-quantum-well heterostructures
- 15 April 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (11), 7678-7684
- https://doi.org/10.1103/physrevb.41.7678
Abstract
Spontaneous- and stimulated-emission spectra from a series of As/GaAs/InAs separate-confinement strained single-quantum-well heterostructures are demonstrated for well widths as thin as 1 monolayer (3 Å). These undoped samples, grown by molecular-beam epitaxy, are the thinnest single quantum wells ever reported to support stimulated emission. Continuous-wave (cw) laser thresholds at 77 K are generally quite low (0.78 kW/) despite the fact that the single quantum wells are undoped and of dimensions () which were previously thought to be too small to effectively collect excess carriers (≪scattering path length). A simple model based on the spatial extent of the wave function, rather than the well width, is proposed to explain the experimental results. Also a simple modified square-well model with strain-induced band-gap correction is found to predict the experimentally measured energy levels of ultrathin quantum wells.
Keywords
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