Multiple-angle ellipsometry of Si–SiO_2 polycrystalline Si system
- 1 May 1985
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America A
- Vol. 2 (5), 723-726
- https://doi.org/10.1364/josaa.2.000723
Abstract
The multiple-angle-of-incidence ellipsometric study of polycrystalline Si deposited on oxidized single-crystal Si is presented. The complex index of refraction of polycrystalline Si, 3.936 + i0.040 at 632.8 nm, and the film thicknesses are obtained with high precision for the optimum thicknesses of a SiO2 layer predicted numerically.Keywords
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