Oxygen Donors Developed around Dislocations in Silicon
- 1 July 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (7A), L411
- https://doi.org/10.1143/jjap.21.l411
Abstract
Plastic deformation of Czochralski silicon crystals at elevated temperature produces both acceptors and donors simultaneously. The former are ascribed to dislocations and the latter to the oxygen atmospheres around dislocations. The energy levels of the deformation-induced donors are determined by Hall measurements. The oxygen atmospheres are found to be very stable and not to easily transform to precipitates of cristobalite by annealing at 900°C.Keywords
This publication has 9 references indexed in Scilit:
- In situ X-raytopographic studies of the generation and the multiplication processes of dislocations in silicon crystals at elevated temperaturesPhilosophical Magazine A, 1981
- The distinction of several different kinds of oxygen donors in siliconPhysica Status Solidi (a), 1981
- Mechanical Strength of Oxygen-Doped Float-Zone Silicon CrystalsJapanese Journal of Applied Physics, 1980
- The effect of thermal treatment on the electrical activity and mobility of dislocations in SiPhysica Status Solidi (a), 1980
- On the kinetics of thermal donors in oxygen-rich silicon in the range from 450 to 900°CPhysica Status Solidi (a), 1980
- The Origin of the Difference in the Mechanical Strengths of Czochralski-Grown Silicon and Float-Zone-Grown SiliconJapanese Journal of Applied Physics, 1980
- Comparison of two kinds of oxygen donors in silicon by resistivity measurementsJournal of Applied Physics, 1979
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957