CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON
- 1 January 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (1), 13-15
- https://doi.org/10.1063/1.1653013
Abstract
Sheet‐resistivity and Hall‐effect measurements on ion‐implanted silicon wafers have been performed. Carrier concentration profiles over the range of about 1019–1011 carriers/cm3 have been obtained for implants of 1014 ions/cm2 of 11B, 27Al, and 31P. Three regions, due to different penetration mechanisms, can be clearly distinguished: the amorphous range, the channeling range, and the supertail. Some indication for a kinetic substitution mechanism is seen in the channeling region.Keywords
This publication has 7 references indexed in Scilit:
- Characteristics of ion-implanted contacts for nuclear particle detectors: II. Concentration distribution in ion-implanted contacts for semiconductor detectorsNuclear Instruments and Methods, 1969
- Substitutional doping during ion implantationSolid-State Electronics, 1968
- Impurity distribution profiles in ion-implanted siliconCanadian Journal of Physics, 1968
- Implantation profiles of 32P channeled into silicon crystalsCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- The fabrication of high quality silicon junction detectors by low energy ion implantationThe European Physical Journal A, 1967
- DEEP (1–10 μ) PENETRATION OF ION-IMPLANTED DONORS IN SILICONApplied Physics Letters, 1966