Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band Discontiuities
- 26 November 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 43 (22), 1686-1689
- https://doi.org/10.1103/physrevlett.43.1686
Abstract
A direct experimental test has revealed that heterojunction energy-band discontinuities are nontransitive. This result was obtained by an x-ray photoemission-spectroscopy investigation of abrupt (110) interfaces in the heterojunction series Ge/CuBr, CuBr/GaAs, and GaAs/Ge. The sum of the valence-band discontinuities for these intefaces is 0.64 ± 0.05 eV, a large deviation from the zero sum expected by transitivity.Keywords
This publication has 11 references indexed in Scilit:
- Self-consistent electronic structure of (110) Ge-ZnSePhysical Review B, 1978
- Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAsPhysical Review Letters, 1978
- Theory of the energy-band lineup at an abrupt semiconductor heterojunctionPhysical Review B, 1977
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge(110) surfaceSurface Science, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977
- Temperature-dependent photoemission studies of the electronic states of CuBrPhysical Review B, 1976
- Problems in the theory of heterojunction discontinuitiesC R C Critical Reviews in Solid State Sciences, 1975
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962