Memory switching phenomena in thin films of the S–Se–Te system
- 1 April 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (4), 1706-1707
- https://doi.org/10.1063/1.1662435
Abstract
Threshold fields have been measured with respect to switching phenomena in thin films of the S–Se–Te systems. The measured threshold field Eth was found to vary as 1/d where d is the film thickness, ranging from 0.1 to 2 μm. The relationship observed between the treshold voltage and ambient temperature indicated that the glass transition temperature played a significant role in both conduction and switching phenomena.Keywords
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