Methane-hydrogen III-V metal-organic reactive ion etching
- 1 April 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (4), 287-289
- https://doi.org/10.1088/0268-1242/6/4/010
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropyJournal of Vacuum Science & Technology B, 1989
- Mass spectroscopic investigation of the CH3 radicals in a methane rf dischargeApplied Physics Letters, 1989
- A Mathematical Model for a Parallel Plate Plasma Etching ReactorJournal of the Electrochemical Society, 1988
- Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gasElectronics Letters, 1987
- Reactive ion etching of GaAs using a mixture of methane and hydrogenElectronics Letters, 1987