Schottky barriers of epitaxial NiSi2 on Si(111)
- 18 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (3), 227-229
- https://doi.org/10.1063/1.99527
Abstract
We have investigated the Schottky‐barrier heights of high‐quality epitaxial type‐A‐ and type‐B‐oriented NiSi2 on n‐doped Si(111). Current‐voltage and photoresponse techniques have been used. The barrier height of type‐A NiSi2 is found to be low (0.64 eV), whereas type‐B NiSi2 yields a high barrier of 0.76 eV. Ideality factors very close to unity (1.00–1.02) have been observed both for type‐A NiSi2 as well as for type B.Keywords
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