Cyclotron Resonance Line Broadening due to Carrier-Carrier Interaction in Germanium
- 1 March 1964
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 19 (3), 288-296
- https://doi.org/10.1143/jpsj.19.288
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Line-Broadening of Cyclotron Resonance due to Lattice and Neutral Impurity Scattering in Silicon and GermaniumJournal of the Physics Society Japan, 1964
- Low temperature, mm-wave cyclotron resonance relaxation times in siliconPhysics Letters, 1963
- Cyclotron Resonance Line Broadening Due to Carrier-Carrier InteractionPhysical Review Letters, 1963
- Measurement of the Relaxation Time for Electrons in Silicon by Cyclotron ResonanceJournal of the Physics Society Japan, 1963
- Measurements of Relaxation Time in Germanium by the Cyclotron ResonanceJournal of the Physics Society Japan, 1962
- Hot Electron Effect in Cyclotron Resonance of GermaniumJournal of the Physics Society Japan, 1962
- Cyclotron resonance over a wide temperature range, II. SiliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1961
- Millimeter Cyclotron Resonance in SiliconPhysical Review Letters, 1960
- Plasma Resonance in Crystals: Observations and TheoryPhysical Review B, 1955
- Further measurements on the heat conductivity of liquid helium IIPhysica, 1940