Novel Technique of Infrared Reflection Absorption Spectroscopy for Si Surface Study

Abstract
It is demonstrated that Fourier-transform infrared reflection absorption spectroscopy with a novel arrangement is a powerful technique to study the nature of Si surfaces. The technique was applied to the observation of the Si-H bond absorption (2083 cm-1) on HF- or NH4F-treated Si(111) surfaces and the Si-O-Si bond absorption (1000-1300 cm-1) of oxides on the Si surface formed by native oxidation in air. Both absorptions were clearly observed.