Auger recombination in InGaAsP
- 15 March 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (6), 512-514
- https://doi.org/10.1063/1.93986
Abstract
Auger recombination in InGaAsP is calculated taking into account a realistic band structure instead of the usual parabolic approximation. It follows that the direct conduction-band process is negligible (at T=300 K), contrary to the parabolic approximation. Actually the valence-band process prevails by far as long as only direct Auger processes are considered. However, if phonon-assisted Auger recombination is included the phonon-assisted conduction-band process dominates. Altogether, a decrease of Auger recombination results, which is in agreement with experiments.Keywords
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