Failure mechanisms of TiN thin film diffusion barriers
- 31 October 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 164, 417-428
- https://doi.org/10.1016/0040-6090(88)90171-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Growth and properties of TiN and TiOxNy diffusion barriers in silicon on sapphire integrated circuitsThin Solid Films, 1987
- Investigation of reactively sputtered TiN films for diffusion barriersThin Solid Films, 1986
- Limitation of Ti/TiN diffusion barrier layers in silicon technologyVacuum, 1985
- Oxygen in titanium nitride diffusion barriersApplied Physics Letters, 1985
- Titanium nitride as a diffusion barrier between nickel silicide and aluminumJournal of Electronic Materials, 1984
- Thermal Stability of Hafnium and Titanium Nitride Diffusion Barriers in Multilayer Contacts to SiliconJournal of the Electrochemical Society, 1983
- Investigation of the Al/TiSi2/Si contact systemJournal of Applied Physics, 1983
- Applications of TiN thin films in silicon device technologyThin Solid Films, 1982
- TiN formed by evaporation as a diffusion barrier between Al and SiJournal of Vacuum Science and Technology, 1982
- Thermal stability of titanium nitride for shallow junction solar cell contactsJournal of Applied Physics, 1981