Amplification of the interface-phonon population under an intense laser field

Abstract

The amplification of the optical-phonon population in an interface system under an intense laser field is discussed in this work. The number of interface phonons is found to increase when the parallel component of the wave vector of phonons is restricted to a certain domain and when the strength of the applied laser field has exceeded a certain threshold value. When these conditions are satisfied, the rate of change of the phonon population is found to depend on the frequencies of interfacial phonon modes, the properties of the external field, the carrier density, and some other material parameters.