Al₂O₃-Silicon MOS Field Effect Transistors

Publisher Website

1 February 1969

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 8 (2)
https://doi.org/10.1143/jjap.8.277

Abstract

No abstract available

Keywords

FIELD EFFECT TRANSISTOR

This publication has 3 references indexed in Scilit:

The Characteristics of Al-Al₂O₃-Si Structures Formed by Reactive Suttering
Japanese Journal of Applied Physics, 1968
Al2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS
Applied Physics Letters, 1968
The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors
IEEE Transactions on Electron Devices, 1966

Cited by 4 articles